| PART |
Description |
Maker |
| NT90 NT90RHBSAC12VCB0.6 NT90RHBSAC12VCB0.9 NT90RNA |
Small size, light weight. Low coil power consumption, heavy contact load. Strong anti-shock and anti-vibration, high reliability, long life.
|
DB Lectro Inc.
DBLECTRO[DB Lectro Inc]
|
| MU1000 |
a long service life battery up to 20years expected life under normal float charge
|
CSB Battery Co., Ltd.
|
| MSJ300 |
a long sevice life battery up to 20years expected life under normal float charge
|
CSB Battery Co., Ltd.
|
| MU1000 |
a long service life battery up to 20years expected life under normal float charge
|
CSB Battery
|
| MSJ1000 |
a long service life battery up to 20years expected life under normal float charge
|
CSB Battery Co., Ltd.
|
| NT90RHAOAC24VSF0.6 NT90RHAOAC110VSB0.6 NT90RHAOAC1 |
FASTON Uninsulated Receptacles & Housings; HSG RCPT FAST 250 3 CIR N BLK ( AMP )
Small size, light weight. Low coil power consumption, heavy contact load. Strong anti-shock and anti-vibration, high reliability, long life. 体积小，重量轻。线圈功耗低，重接触载荷。强抗休克，抗振动，可靠性高，寿命长
|
DB Lectro Inc.
DB Lectro, Inc.
|
| 105SMH050M |
Small size ?Extended Life ?Low cost
|
Illinois Capacitor, Inc...
|
| K4C561638C-TCDA K4C560838C-TCDA K4C561638C-TCD4000 |
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 220uF; Voltage: 200V; Case Size: 18x31 mm; Packaging: Bulk
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 47uF; Voltage: 200V; Case Size: 12.5x20 mm; Packaging: Bulk 256Mb的网络内
256Mb Network-DRAM 256Mb的网络内
32M X 8 SYNCHRONOUS DRAM, 0.75 ns, PDSO66
32M X 8 SYNCHRONOUS DRAM, 0.65 ns, PDSO66
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4C89183AF K4C89083AF-GIFB K4C89083AF-AIFB K4C8909 |
288Mb x18 Network-DRAM2 Specification 288Mb x18网络DRAM2规范
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 250V; Case Size: 16x31.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 33uF; Voltage: 250V; Case Size: 12.5x20 mm; Packaging: Bulk
JT 55C 55#22M PIN PLUG
JT 8C 8#16 PIN PLUG
Thyristor / Diode Module; Repetitive Reverse Voltage Max, Vrrm:2200V; Current, It av:430A; Gate Trigger Voltage Max, Vgt:3V; Gate Trigger Current Max, Igt:200mA; Package/Case:LD43; di/dt:200A/ s RoHS Compliant: Yes
JT 55C 55#22 SKT PLUG
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| ROT-116 ROT-200 |
Precision Rotative Transducers, Laws: Sine and Cosine/Sine Only/Cosine Only, Size 11-20, Continuous Measure on 360 Degrees, Long Life, Bushing or Servo Mounting
|
Vishay
|
